国家/地区 美国（10） 世界知识产权组织（5） 日本（4） 台湾（4） 中国（3） 欧洲专利局（EPO）（3） 韩国（3）
IPC部 H（12） B（6） C（4）
IPC大类 H01（12） B32（4） B82（4）
C01（3） C23（3） B05（2）
C30（2） H05（2）
IPC小类 H01L（12） B32B（4） B82Y（4）
C01B（3） C23C（3） B05D（2）
C30B（2） H05K（2）
IPC H01L021/20（12）
发明人 SUNG C（2）
公开年 2010（6） 2011（5）
申请年 2009（12）
专利权人 INT BUSINESS.（2）

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Forming a graphene layer including at least one graphene monolayer comprises forming a semiconductor-carbon alloy layer on a semiconductor substrate, and converting the semiconductor-carbon alloy layer into a semiconductor carbide layer.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C

Forming a graphene layer on a substrate used in semiconductor devices involves providing the substrate; depositing a metal carbide layer onto the substrate, and annealing the metal carbide layer to produce the graphene layer.

MA C

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Method for forming epitaxial graphene layer on electronic component i.e. semiconductor memory, involves removing native oxide film formed on silicon carbide substrate to form epitaxial graphene layer on silicon carbide substrate.

JIN CHO B, HO SEO J, JIN GANG B

Method for forming thin coating dielectric material on surface of carbon-based material e.g. graphene, involves forming ultra thin silicon nucleation layer of specific thickness on portion of surface of carbon-based material.

BABICH K, CALLEGARI A, CHEN Z, KIEWRA E, SUN Y

Graphene thin film formation method for semiconductor device, involves spraying graphene dispersed solution on substrate, preparing oxidation graphite, adding hydrazine in oxidation graphite, and diluting graphene dispersed solution.

SEOK JEONG J, JEONG KIM U, BETEU HONG P, HAI DIN P, PAN TU DUEONG W, BIET KUEONG T, CHUNG J S, KIM E J, PHAM V H, PHAM H D, NGUYEN P T D, TRAN V C

Substrate used for electron and optical integrated circuit apparatus, has graphene layer which is grown parallel with respect to surface of substrate and atomic layer of metal oxide provided on other surface of substrate.

HIROKA M, KYOTANI T, OKAI M, ORIKASA H, ORIGASA H, HIROOKA M

Formation method of e.g. optoelectronic device, involves forming graphene layer on substrate, and layer of insulating material on top of graphene layer.

BALANDIN A A, GHOSH S, KOTCHETKOV D